GOFORD G7P03
The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.| Part No. | G7P03 |
|---|---|
| Datasheet | G7P03 Download |
| Manufacturer | GOFORD |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS● ID (at VGS = -10V)
● RDS(ON) (at VGS = -10V)
● RDS(ON) (at VGS = -4.5V)
● 100% Avalanche Tested
● RoHS Compliant Application -30V -7A < 20.5mΩ < 26mΩ
● Synchronous Rectification in SMPS or LED Driver
● UPS
● Motor Control
● BMS
● High Frequency Circuit Schematic diagram G7P03 Marking and pin assignment Device G7P03D2 Package DFN2*2-6L Marking G7P03 DFN2*2-6L Packaging 3000pcs/Reel
ABSOLUTE MAXIMUM RATINGS
TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range (note1) VDS ID IDM VGS PD TJ, Tstg Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient (note3) Symbol RthJA Value -30 -7 -28 ±20 1.3 -55 To 150 Value 95 Unit V A A V W ºC Unit ºC/W TEL：0755-29961263 FAX:0755-29961466 GOFORD G7P03D2 Specifications TJ = 25ºC, unless otherwise noted P...
