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G7P03 - P-Channel Enhancement Mode Power MOSFET

Download the G7P03 datasheet PDF. This datasheet also covers the G7P03D2 variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -10V).
  • RDS(ON) (at VGS = -4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G7P03D2-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G7P03
Manufacturer GOFORD
File Size 445.00 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G7P03 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G7P03D2 P-Channel Enhancement Mode Power MOSFET
G7P03L P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GOFORD G7P03D2 P-Channel Enhancement Mode Power MOSFET Description The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = -10V) ⚫ RDS(ON) (at VGS = -10V) ⚫ RDS(ON) (at VGS = -4.5V) ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application -30V -7A < 20.