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G7P03D2 - P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -10V).
  • RDS(ON) (at VGS = -4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet Details

Part number G7P03D2
Manufacturer GOFORD
File Size 445.00 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G7P03D2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD G7P03D2 P-Channel Enhancement Mode Power MOSFET Description The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = -10V) ⚫ RDS(ON) (at VGS = -10V) ⚫ RDS(ON) (at VGS = -4.5V) ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application -30V -7A < 20.