Datasheet4U Logo Datasheet4U.com

G7P03L - P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -10V).
  • RDS(ON) (at VGS = -4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant -30V -7A < 23mΩ < 34mΩ.

📥 Download Datasheet

Datasheet Details

Part number G7P03L
Manufacturer GOFORD
File Size 834.75 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G7P03L Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
G7PH42U-EP IRG7PH42U-EP International Rectifier

Other Datasheets by GOFORD

Part Number Description
G7P03 P-Channel Enhancement Mode Power MOSFET
G7P03D2 P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GOFORD G7P03L P-Channel Enhancement Mode Power MOSFET Description The G7P03L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = -10V) ⚫ RDS(ON) (at VGS = -10V) ⚫ RDS(ON) (at VGS = -4.