GT090N06 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the GT090N06 datasheet PDF. This datasheet also includes the GT090N06D52 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

GT090N06 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (GT090N06D52-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	GT090N06
Manufacturer	GOFORD
File Size	690.72 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT090N06 Datasheet

General Description

The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

GOFORD N-Channel Enhancement Mode Power MOSFET GT090N06D52.

Key Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant 60V 40A < 14mΩ < 18mΩ.

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