GT090N06K
GT090N06K is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
N-Channel Enhancement Mode Power MOSFET
Description
The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
60V 45A < 9mΩ < 15mΩ l 100% Avalanche Tested l Ro HS pliant
Schematic diagram
Application l Power switch l DC/DC converters
Ordering Information
Device GT090N06K
Package TO-252
Marking GT090N06
TO-252
Packaging...
