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GT090N06K - N-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 45A < 9mΩ < 15mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Datasheet preview – GT090N06K

Datasheet Details

Part number GT090N06K
Manufacturer GOFORD
File Size 701.35 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT090N06K Datasheet
Additional preview pages of the GT090N06K datasheet.

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Full PDF Text Transcription

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GT090N06K N-Channel Enhancement Mode Power MOSFET Description The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.
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