GT090N06K Description
The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
GT090N06K is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
| Part Number | Description |
|---|---|
| GT090N06 | N-Channel Enhancement Mode Power MOSFET |
| GT090N06D52 | N-Channel Enhancement Mode Power MOSFET |
| GT007N04 | N-Channel Enhancement Mode Power MOSFET |
| GT007N04TL | N-Channel Enhancement Mode Power MOSFET |
| GT013N04 | N-Channel Enhancement Mode Power MOSFET |
The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.