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GT110N06 - N-Channel Enhancement Mode Power MOSFET

Download the GT110N06 datasheet PDF. This datasheet also covers the GT110N06S variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 60V 14A < 11mΩ < 14mΩ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GT110N06S-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GT110N06
Manufacturer GOFORD
File Size 600.18 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT110N06 Datasheet

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Other Datasheets by GOFORD

Part Number Description
GT110N06S N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GOFORD GT110N06S N-Channel Enhancement Mode Power MOSFET Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.