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GT110N06 Datasheet

N-channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

This datasheet includes multiple variants, all published together in a single manufacturer document.

GT110N06 Overview

The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.

GT110N06 Key Features

  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V)
  • 100% Avalanche Tested
  • RoHS pliant
  • Synchronous Rectification in SMPS or LED Driver
  • Motor Control
  • High Frequency Circuit

More Datasheets from GOFORD

See all GOFORD datasheets

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GT110N06 Distributor