GT110N06
GT110N06 is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
- Part of the GT110N06S comparator family.
- Part of the GT110N06S comparator family.
GOFORD
GT110N06S
N-Channel Enhancement Mode Power MOSFET
Description
The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
- 100% Avalanche Tested
- Ro HS pliant
60V 14A < 11mΩ < 14mΩ
Application
- Synchronous Rectification in SMPS or LED Driver
- UPS
- Motor Control
- BMS
- High Frequency Circuit
Schematic Diagram Marking and pin assignment
SOP-8
Device GT110N06S
Package SOP-8
Marking GT110N06
Packaging...
