Part GT110N06S
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer GOFORD
Size 600.18 KB
GOFORD

GT110N06S Overview

Description

The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.

Key Features

  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V)
  • 100% Avalanche Tested
  • RoHS Compliant 60V 14A < 11mΩ < 14mΩ