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GT110N06S - N-Channel Enhancement Mode Power MOSFET

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 60V 14A < 11mΩ < 14mΩ.

📥 Download Datasheet

Datasheet Details

Part number GT110N06S
Manufacturer GOFORD
File Size 600.18 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT110N06S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD GT110N06S N-Channel Enhancement Mode Power MOSFET Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.