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SSF18N50F Datasheet 500V N-Channel MOSFET

Manufacturer: GOOD-ARK

Download the SSF18N50F datasheet PDF. This datasheet also includes the SSF18N50F-GOOD variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SSF18N50F-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF18N50F
Manufacturer GOOD-ARK
File Size 1.11 MB
Description 500V N-Channel MOSFET
Download SSF18N50F Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=5.2mH Avalanche Current @ L=5.2mH Operating Junction and Storage Temperature Range Max.

Overview

Main Product Characteristics VDSS 500V RDS(on) 0.22ohm(typ.) ID.

Key Features

  • TO- 220F.
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.