Datasheet Summary
Main Product Characteristics
VDSS
500V
RDS(on) 0.22ohm(typ.)
ID 18A
Features and Benefits
TO- 220F
- Advanced Process Technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
- Lead free product
500V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and...