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SSF3639C - MOSFET

Download the SSF3639C datasheet PDF. This datasheet also covers the SSF3639C-GOOD variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.

The complementary MOSFET may be used in power inverters, and other applications.

Key Features

  • N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V.
  • P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product.
  • Surface Mount Package N-channel P-channel Schematic Diagram Marking and Pin Assignment SOP-8 Top View.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF3639C-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF3639C
Manufacturer GOOD-ARK
File Size 310.01 KB
Description MOSFET
Datasheet download datasheet SSF3639C Datasheet

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Other Datasheets by GOOD-ARK

Part Number Description
SSF3637 30V Dual P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSF3639C 30V Complementary MOSFET DESCRIPTION The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.