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SSF3637 - MOSFET

General Description

The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

25V).

Key Features

  • VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number SSF3637
Manufacturer Silikron Semiconductor
File Size 391.04 KB
Description MOSFET
Datasheet download datasheet SSF3637 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSF3637 DESCRIPTION The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). GENERAL FEATURES ●VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.