SSF3639C Overview
The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The plementary MOSFET may be used in power inverters, and other applications.
SSF3639C Key Features
- N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V
- P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V
- High Power and current handing capability -Lead free product is acquired -Surface Mount Package
