SSFK3220B Datasheet | Good-Ark Semiconductor

Features and Benefits - Fast switching and reverse body recovery - Ideal for 1.5V gate drive applications - Low on-resistance with low gate charge - ESD protection up to 2KV 20V Dual N-Channel MOSFETs S2 G2 D1 D2 G1 S1 SOT-363 D1 D2 G1 G2 S1 S2 Schematic Diagram Description The SSFK3220B utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25°C) Drain Current - Continuous (TC=100°C) Drain Current - Pulsed1 Power Dissipation (TC=25°C) Power Dissipation - Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Thermal Characteristics Parameter Thermal Resistance Junction to Ambient Symbol VDS VGS ID IDM PD TSTG TJ Rating 20 ±8 800 510 3.2 275 2.2 -55 to +150 -55 to +150 Symbol RθJA Typ. --- Max. 450 Unit V V m A m A A m W m W/°C °C °C Unit °C/W 1/4 20V Dual N-Channel MOSFETs Electrical Characteristics (TJ=25°C unless otherwise...