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GS8160F18/32/36DGT-6.5/7.5
100-Pin TQFP Commercial Temp Industrial Temp
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
6.5 ns – 7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O
Features
• Flow Through mode operation • Single Cycle Deselect (SCD) operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • RoHS-compliant 100-lead TQFP package available
Functional Description
Applications The GS8160F18/32/36DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.
GS8160F18DGT Datasheet
