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GS8160F18DGT Datasheet 18mb Sync Burst Srams

Manufacturer: GSI Technology

Overview: GS8160F18/32/36DGT-6.5/7.5 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 6.5 ns – 7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.

Datasheet Details

Part number GS8160F18DGT
Manufacturer GSI Technology
File Size 210.62 KB
Description 18Mb Sync Burst SRAMs
Datasheet GS8160F18DGT-GSITechnology.pdf

General Description

Applications The GS8160F18/32/36DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main s

Key Features

  • Flow Through mode operation.
  • Single Cycle Deselect (SCD) operation.
  • 2.5 V or 3.3 V +10%/.
  • 10% core power supply.
  • 2.5 V or 3.3 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Internal self-timed write cycle.
  • Automatic power-down for portable.

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