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GS8160F32DGT Datasheet 18mb Sync Burst Srams

Manufacturer: GSI Technology

Overview: GS8160F18/32/36DGT-6.5/7.5 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 6.5 ns – 7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Applications The GS8160F18/32/36DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main s

Key Features

  • Flow Through mode operation.
  • Single Cycle Deselect (SCD) operation.
  • 2.5 V or 3.3 V +10%/.
  • 10% core power supply.
  • 2.5 V or 3.3 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Internal self-timed write cycle.
  • Automatic power-down for portable.

More Datasheets from GSI Technology

Part Number Description
GS8160F36DGT 18Mb Sync Burst SRAMs
GS8160F18DGT 18Mb Sync Burst SRAMs
GS8160FZ18DGT 18Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS8160FZ36DGT 18Mb Pipelined and Flow Through Synchronous NBT SRAMs
GS816018BT-150 18Mb Sync Burst SRAMs
GS816018BT-200 18Mb Sync Burst SRAMs
GS816018BT-250 18Mb Sync Burst SRAMs
GS816018T-133 18Mb Sync Burst SRAMs
GS816018T-150 18Mb Sync Burst SRAMs
GS816018T-166 18Mb Sync Burst SRAMs

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