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GS8160F36DGT - 18Mb Sync Burst SRAMs

This page provides the datasheet information for the GS8160F36DGT, a member of the GS8160F18DGT 18Mb Sync Burst SRAMs family.

Description

Applications The GS8160F18/32/36DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Features

  • Flow Through mode operation.
  • Single Cycle Deselect (SCD) operation.
  • 2.5 V or 3.3 V +10%/.
  • 10% core power supply.
  • 2.5 V or 3.3 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Internal self-timed write cycle.
  • Automatic power-down for portable.

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Datasheet preview – GS8160F36DGT

Datasheet Details

Part number GS8160F36DGT
Manufacturer GSI Technology
File Size 210.62 KB
Description 18Mb Sync Burst SRAMs
Datasheet download datasheet GS8160F36DGT Datasheet
Additional preview pages of the GS8160F36DGT datasheet.

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Full PDF Text Transcription

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GS8160F18/32/36DGT-6.5/7.5 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 6.5 ns – 7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features • Flow Through mode operation • Single Cycle Deselect (SCD) operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • RoHS-compliant 100-lead TQFP package available Functional Description Applications The GS8160F18/32/36DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.
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