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GS8161E32D Datasheet 18Mb SyncBurst SRAMs

Manufacturer: GSI Technology

Download the GS8161E32D datasheet PDF. This datasheet also includes the GS8161E18D variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (GS8161E18D-GSITechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GS8161E32D
Manufacturer GSI Technology
File Size 1.19 MB
Description 18Mb SyncBurst SRAMs
Datasheet download datasheet GS8161E32D Datasheet

General Description

Applications The GS8161E18D(GT/D)/GS8161E32D(D)/GS8161D36D(GT/D) is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Controls Addresses, data I/Os, chip enable (E1), address burst control inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positiveedge-triggered clock input (CK).

Overview

GS8161E18D(GT/D)/GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.

Key Features

  • FT pin for user-configurable flow through or pipeline operation.
  • Dual Cycle Deselect (DCD) operation.
  • IEEE 1149.1 JTAG-compatible Boundary Scan.
  • 2.5 V or 3.3 V +10%/.
  • 10% core power supply.
  • 2.5 V or 3.3 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Default to Interleaved Pipeline mode.
  • Byte Write (BW) and/or Global Write (GW) opera.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
GSI Logo GS8161E32 (GS8161E18 - GS8161E36) Sync Burst SRAMs GSI

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