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GS832118E-V Datasheet 36Mb Sync Burst SRAMs

Manufacturer: GSI Technology

Overview: GS832118/32/36E-xxxV Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1.8 V or 2.5 V VDD 1.8 V or 2.

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Datasheet Details

Part number GS832118E-V
Manufacturer GSI Technology
File Size 729.72 KB
Description 36Mb Sync Burst SRAMs
Download GS832118E-V Download (PDF)

General Description

Applications The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

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Key Features

  • IEEE 1149.1 JTAG-compatible Boundary Scan.
  • 1.8 V or 2.5 V core power supply.
  • 1.8 V or 2.5 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Internal self-timed write cycle.
  • Automatic power-down for portable.

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