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GS8342T08BGD - 36Mb SigmaDDR-II Burst of 2 SRAM

This page provides the datasheet information for the GS8342T08BGD, a member of the GS8342T08BD 36Mb SigmaDDR-II Burst of 2 SRAM family.

Features

  • Simultaneous Read and Write SigmaDDR™ Interface.
  • Common I/O bus.
  • JEDEC-standard pinout and package.
  • Double Data Rate interface.
  • Byte Write (x36, x18 and x9) and Nybble Write (x8) function.
  • Burst of 2 Read and Write.
  • 1.8 V +100/.
  • 100 mV core power supply.
  • 1.5 V or 1.8 V HSTL Interface.
  • Pipelined read operation with self-timed Late Write.
  • Fully coherent read and write pipelines.
  • ZQ pin for pr.

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Datasheet preview – GS8342T08BGD

Datasheet Details

Part number GS8342T08BGD
Manufacturer GSI Technology
File Size 268.41 KB
Description 36Mb SigmaDDR-II Burst of 2 SRAM
Datasheet download datasheet GS8342T08BGD Datasheet
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Full PDF Text Transcription

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GS8342T08/09/18/36BD-400/350/333/300/250 165-Bump BGA Commercial Temp Industrial Temp 36Mb SigmaDDR-IITM Burst of 2 SRAM 400 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaDDR™ Interface • Common I/O bus • JEDEC-standard pinout and package • Double Data Rate interface • Byte Write (x36, x18 and x9) and Nybble Write (x8) function • Burst of 2 Read and Write • 1.8 V +100/–100 mV core power supply • 1.5 V or 1.8 V HSTL Interface • Pipelined read operation with self-timed Late Write • Fully coherent read and write pipelines • ZQ pin for programmable output drive strength • IEEE 1149.
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