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GS8673ET18BK - 72Mb SigmaDDR-IIIe Burst of 2 ECCRAM

Features

  • On-Chip ECC with virtually zero SER.
  • Configurable Read Latency (3.0 or 2.0 cycles).
  • Simultaneous Read and Write SigmaDDR-IIIe™ Interface.
  • Common I/O Bus.
  • Double Data Rate interface.
  • Burst of 2 Read and Write.
  • Pipelined read operation.
  • Fully coherent Read and Write pipelines.
  • 1.35V nominal VDD.
  • 1.2V JESD8-16A BIC-3 Compliant Interface.
  • 1.5V HSTL Interface.
  • ZQ pin for programmable output dr.

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Datasheet Details

Part number GS8673ET18BK
Manufacturer GSI Technology
File Size 271.34 KB
Description 72Mb SigmaDDR-IIIe Burst of 2 ECCRAM
Datasheet download datasheet GS8673ET18BK Datasheet

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Full PDF Text Transcription

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GS8673ET18/36BK-675/625/550/500 260-Ball BGA Commercial Temp Industrial Temp 72Mb SigmaDDR-IIIe™ Burst of 2 ECCRAM™ 675 MHz–500 MHz 1.35V VDD 1.2V to 1.5V VDDQ Features • On-Chip ECC with virtually zero SER • Configurable Read Latency (3.0 or 2.0 cycles) • Simultaneous Read and Write SigmaDDR-IIIe™ Interface • Common I/O Bus • Double Data Rate interface • Burst of 2 Read and Write • Pipelined read operation • Fully coherent Read and Write pipelines • 1.35V nominal VDD • 1.2V JESD8-16A BIC-3 Compliant Interface • 1.5V HSTL Interface • ZQ pin for programmable output drive impedance • ZT for programmable input termination impedance • Configurable Input Termination • IEEE 1149.
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