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GS88118B - (GS88118B - GS88136B) Sync Burst SRAMs

General Description

Applications The GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D) is a 9,437,184-bit high performance synchronous SRAM with a 2bit burst address counter.

Key Features

  • IEEE 1149.1 JTAG-compatible Boundary Scan.
  • 2.5 V or 3.3 V +10%/.
  • 10% core power supply.
  • 2.5 V or 3.3 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Internal self-timed write cycle.
  • Automatic power-down for portable.

📥 Download Datasheet

Datasheet Details

Part number GS88118B
Manufacturer GSI
File Size 1.04 MB
Description (GS88118B - GS88136B) Sync Burst SRAMs
Datasheet download datasheet GS88118B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D) 100-pin TQFP & 165-bump BGA Commercial Temp Industrial Temp Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 100-lead TQFP and 165-bump BGA packages • RoHS-compliant 100-lead TQFP and 165-bump BGA packages available 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.