Datasheet4U Logo Datasheet4U.com

G2300 - CMOS Positive Voltage Regulator

Datasheet Summary

Description

Low on-resistance Capable of 2.5V gate drive Small Package Outline

Features

  • Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA.

📥 Download Datasheet

Datasheet preview – G2300

Datasheet Details

Part number G2300
Manufacturer GTM
File Size 339.73 KB
Description CMOS Positive Voltage Regulator
Datasheet download datasheet G2300 Datasheet
Additional preview pages of the G2300 datasheet.

📁 Similar Datasheet

  • G2306A - N-Channel MOSFET (VBsemi)
  • G2309 - P-Channel MOSFET (VBsemi)
  • G230HAN01.1 - FHD Color TFT-LCD (AUO)
  • G230P06 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G230P06K - P-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G2310 - N-Channel 60V MOSFET (VBsemi)
  • G23270006 - Quartz Crystal (PSE Technology)
  • G23270013 - Quartz Crystal (PSE Technology)
  • G23270023 - Quartz Crystal (PSE Technology)
  • G238HAN01.0 - Color TFT-LCD (AUO)
Other Datasheets by GTM
  • G2301 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • G2302 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • G2303 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • G2304 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • G2304A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • G2305 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • G2305A - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • G2306 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B G2300 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 6A The G2300 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2300 is universally used for all commercial-industrial surface mount applications. Description *Low on-resistance *Capable of 2.5V gate drive *Small Package Outline Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.
Published: |