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G2301 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

BVDSS RDS(ON) ID -20V 130m -2.6A

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Datasheet Details

Part number G2301
Manufacturer GTM
File Size 417.65 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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www.DataSheet4U.com Pb Free Plating Product CORPORATION G2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B The G2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description BVDSS RDS(ON) ID -20V 130m -2.6A Features Applications Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged Power Management in Notebook Computer Portable Equipment Battery Powered System. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF.
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