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G2302 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

Capable of 2.5V gate drive Small Package Outline

Features

  • Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA =25 ID.

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Datasheet preview – G2302

Datasheet Details

Part number G2302
Manufacturer GTM
File Size 393.49 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G2302 Datasheet
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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/07/06 REVISED DATE :2005/03/14B G2302 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 85m 3.2A The G2302 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. Description *Capable of 2.5V gate drive *Small Package Outline Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.
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