GDBAS16 Datasheet | GTM

Description V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A ISSUED DATE :2006/12/12 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E The GDBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at TA = 25 Parameter Junction Temperature Storage Temperature Reverse Voltage Repetitive Reverse Voltage Forward Current Repetitive Forward Current Forward Surge Current (1ms) Total Power Dissipation Symbol Tj Tstg VR VRRM IO IFM IFSM PD Ratings +150 -65 ~ +150 85 85 250 500 1000 225 V V m A m A m A m W Unit Electrical Characteristics (at TA = 25 Characteristic Reverse Breakdown Voltage Symbol V(BR) VF(1) Forward Voltage VF(2) VF(3) VF(4) Reverse Current Total Capacitance Reverse Recovery Time IR CT Trr Min. 85 - unless otherwise noted) Max. 715 855 1000 1250 1 2 6 Unit V m V m V m V m V u A p F n S IR=100u A IF=1m A IF=10m A IF=50m A IF=150m A VR=85V VR=0, f=1MHz IF=IR=10m A, RL =100 measured at IR=1m A Test Conditions Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2006/12/12 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220,...