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GJ1202 - PNP EPITAXIAL PLANAR SILICON TRANSISTOR

General Description

The GJ1202 is designed for voltage regulators, relay drivers, lamp drivers and electrical equipment applications.

Key Features

  • Large current capacitance and wide ASO.
  • Low collector-to-emitter saturation voltage.
  • Fast switching speed Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (Ta = 25ะบ,unless otherwise specified) Parameter Symbol Ratings Unit Collec.

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Datasheet Details

Part number GJ1202
Manufacturer GTM
File Size 391.37 KB
Description PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Datasheet download datasheet GJ1202 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ISSUED DATE :2005/06/07 REVISED DATE : GJ1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR Description The GJ1202 is designed for voltage regulators, relay drivers, lamp drivers and electrical equipment applications. Features *Large current capacitance and wide ASO *Low collector-to-emitter saturation voltage *Fast switching speed Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.