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GJ122 - NPN EPITAXIAL PLANAR TRANSISTOR

General Description

The GJ122 is designed for use in general purposes and low speed switching applications.

Key Features

  • High DC current gain.
  • Built-in a damper diode at E-C Package Dimensions TO-252 Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage BVCBO Collector to Emitter Voltage BVCEO Emitter to Base Voltage BVEBO Collector Current IC Total Power Dissipation(Tc=25к) PD REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J.

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Datasheet Details

Part number GJ122
Manufacturer GTM
File Size 185.61 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet GJ122 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B GJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description The GJ122 is designed for use in general purposes and low speed switching applications. Features ԦHigh DC current gain ԦBuilt-in a damper diode at E-C Package Dimensions TO-252 Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage BVCBO Collector to Emitter Voltage BVCEO Emitter to Base Voltage BVEBO Collector Current IC Total Power Dissipation(Tc=25к) PD REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.