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ISSUED DATE :2005/07/15 REVISED DATE :
GJ4672
Description Features
NPN EPITAXIAL SILICON TRANSISTOR
The GJ4672 is designed for low frequency amplifier applications. Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics
Package Dimensions
TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.
GJ4672 Datasheet
