• Part: GJ494
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Manufacturer: GTM
  • Size: 282.74 KB
Download GJ494 Datasheet PDF
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Datasheet Summary

.. Pb Free Plating Product ISSUED DATE :2006/12/07 REVISED DATE : N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 11m 55A The GJ494 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all mercial-industrial surface mount applications and suited for use as a high side switch in SMPS and general purpose applications. - Simple Drive Requirement - Lower On-resistance - Fast Switching Characteristic Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K...