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GJ9T16 Datasheet PDF

GTM GJ9T16

The GJ9T16 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Part No. GJ9T16
Datasheet GJ9T16 Download
Manufacturer
GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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GJ9T16 datasheet page 1 preview

DESCRIPTION

FEATURES

Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 20 ±12 25 16 90 25 0.2 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 5 110 Unit /W /W GJ9T16 Page: 1/4 ISSUED DATE :2005/11/16 REVISED DATE :

ELECTRICAL CHARACTERISTICS

(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
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