GJ9T18 Datasheet Text
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Pb Free Plating Product
ISSUED DATE :2005/04/06 REVISED DATE :
GJ9T 18
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 14m 38A
Description
The GJ9T18 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Capable of 2.5V gate drive
- Low Gate Charge
Features
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80...