GJSD1802 is NPN EPITAXIAL PLANAR SILICON TRANSISTOR manufactured by GTM.
| Part Number | Description |
|---|---|
| GJSD1803 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| GJSD1804 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| GJSBL1030CT | (GJSBL1030CT - GJSBL1060CT) SCHOTTKY BARRIER RECTIFIERS |
| GJSBL1035CT | (GJSBL1030CT - GJSBL1060CT) SCHOTTKY BARRIER RECTIFIERS |
| GJSBL1040CT | (GJSBL1030CT - GJSBL1060CT) SCHOTTKY BARRIER RECTIFIERS |
Features NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. Adoption of FBET, MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed Package Dimensions TO-252 REF. A B C D E F S Millimeter Min.
