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GJSD1802 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Features

  • NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.
  • Adoption of FBET, MBIT processes.
  • Large current capacity and wide ASO.
  • Low collector-to-emitter saturation voltage.
  • Fast switching speed Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.2.

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Datasheet Details

Part number GJSD1802
Manufacturer GTM
File Size 517.26 KB
Description NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Datasheet download datasheet GJSD1802 Datasheet
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www.DataSheet4U.com ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B GJSD1802 Description Features NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. *Adoption of FBET, MBIT processes *Large current capacity and wide ASO *Low collector-to-emitter saturation voltage *Fast switching speed Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.
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