GJSD1802 Datasheet | GTM

Description Features NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. - Adoption of FBET, MBIT processes - Large current capacity and wide ASO - Low collector-to-emitter saturation voltage - Fast switching speed Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Dissipation (Ta = 25 Tj Tstg VCBO VCEO VEBO IC ICP PD Tc=25 , unless otherwise specified) Symbol Ratings +150 -55 ~ +150 60 50 6 3 6 1 20 Unit V V V A A W W Electrical Characteristics (Ta = 25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) h FE1 h FE2 f T ton tstg tf Cob Min. 60 50 6 100 35 Typ. 0.19 0.94 150 70 650 35 25 unless otherwise specified) Max. 1 1 0.5 1.2 560 MHZ ns ns ns p F Unit V V V A A V V IC=10u A, IE =0 IC=1m A, RBE= IE=10u A, IC=0 VCB=40V, IE =0 VEB=4V, IC=0 IC=2A, IB=0.1A IC=2A, IB=0.1A VCE=2V, IC=0.1A VCE=2V, IC=3A VCE=10V,IC=50m A See test circuit See test circuit See test circuit VCB=10V, f=1MHz Test Conditions Page: 1/3 ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B Classification Of h FE1 Rank Range R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 U 280 ~ 560 Switching Time Test Circuit Characteristics Curve Page: 2/3 ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support...