GJSD1804 Datasheet | GTM

Description Features NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. - Low collector-to-emitter saturation voltage - High current and high f T - Excellent linearity of h FE - Fast switching time Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Dissipation (Ta = 25 Tj Tstg VCBO VCEO VEBO IC IC PD Tc=25 , unless otherwise specified) Symbol Ratings +150 -55 ~ +150 60 50 6 8 12 1 20 Unit V V V A A W W Electrical Characteristics (Ta = 25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) h FE1 h FE2 f T tstg tf Cob Min. 60 50 6 70 35 Typ. 0.2 0.95 180 500 20 65 unless otherwise specified) Max. 1 1 0.4 1.3 400 MHZ ns ns p F Unit V V V u A u A V V IC=10u A, IE=0 IC=1m A, RBE= IE=10u A, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 IC=4A, IB=0.2A IC=4A, IB=0.2A VCE=2V, IC=0.5A VCE=2V, IC=6A VCE=5V,IC=1A See test circuit See test circuit VCB=10V, f=1MHz Test Conditions Page: 1/3 ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B Classification Of h FE1 Rank Range Q 70 ~ 140 R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 Switching Time Test Circuit Characteristics Curve Page: 2/3 ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or...