GTM GJSD1803
The GJSD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications.| Part No. | GJSD1803 |
|---|---|
| Datasheet | GJSD1803 Download |
| Manufacturer |  GTM |
| Description | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R *Low collector-to-emitter saturation voltage. *High current and high fT *Excellent linearity of hFE *Fast switching time Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20ABSOLUTE MAXIMUM RATINGS
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Dissipation (Ta = 25 Tj Tstg VCBO VCEO VEBO IC ICP PD Tc=25 , unless otherwise specified) Symbol Ratings +150 -55 ~ +150 60 50 6 5 8 1 20 Unit V V V A A W WELECTRICAL CHARACTERISTICS
(Ta = 25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT ton tstg tf Cob Min. 60 50 6 70 35 Typ. 0.22 0.95 180 50 500 20 40 unless otherwise specified) Max.
