GJSD1803 is NPN EPITAXIAL PLANAR SILICON TRANSISTOR manufactured by GTM.
| Part Number | Description |
|---|---|
| GJSD1802 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| GJSD1804 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| GJSBL1030CT | (GJSBL1030CT - GJSBL1060CT) SCHOTTKY BARRIER RECTIFIERS |
| GJSBL1035CT | (GJSBL1030CT - GJSBL1060CT) SCHOTTKY BARRIER RECTIFIERS |
| GJSBL1040CT | (GJSBL1030CT - GJSBL1060CT) SCHOTTKY BARRIER RECTIFIERS |
Features NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. Low collector-to-emitter saturation voltage. High current and high fT Excellent linearity of hFE Fast switching time Package Dimensions TO-252 REF.
