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GSB1132 Datasheet PDF

GTM GSB1132

The GSB1132 is a epitaxial 1/3 P N P E PI TA XI A L SI LI CO N T RA N SI STO R Description planar type PNP silicon transistor .
Part No. GSB1132
Datasheet GSB1132 Download
Manufacturer
GTM
Description PNP EPITAXIAL PLANAR TRANSISTOR
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GSB1132 datasheet page 1 preview

FEATURES

Low VCE(sat). VCE(sat) = -0.2V(Typ.) Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 1.50 1.30 2.40 0.89 4.25 1.70 1.50 2.60 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 1.40 0.35 5 0.52 1.60 0.41 TYP. 0.70 REF. Unit

ABSOLUTE MAXIMUM RATINGS

(Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(PULSE) Collector Power Dissipation (note1) ,unless otherwise specified) Ratings +150 -55 ~ +150 -40 -32 -5 -1 -2 0.5 2 V V V A A W W Tj Tstg VCBO VCEO VEBO IC IC PD Symbol Collector Power Dissipation (note2) PD Note 1:Single pulse, PW=100ms Note 2: When mounted on a 40*40*0.7 mm ceramic board.

ELECTRICAL CHARACTERISTICS

(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Min. -40 -32 -5 82 Typ. -0.2 150 20 ,unless otherwise specified) Unit V V V uA uA V MHz pF IC=-50uA IC=-1mA IE=-50uA VCB=-20V VEB=-4V IC=-500...
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