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GSB1132 - PNP EPITAXIAL PLANAR TRANSISTOR

Description

planar type PNP silicon transistor .

Features

  • Low VCE(sat). VCE(sat) = -0.2V(Typ. ) Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 1.50 1.30 2.40 0.89 4.25 1.70 1.50 2.60 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 1.40 0.35 5 0.52 1.60 0.41 TYP. 0.70 REF. Unit Absolute Maximum Ratings (Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(PULSE) Collector Power Di.

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Datasheet Details

Part number GSB1132
Manufacturer GTM
File Size 268.79 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet GSB1132 Datasheet
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www.DataSheet4U.com G S B 11 3 2 The GSB1132 is a epitaxial 1/3 P N P E PI TA XI A L SI LI CO N T RA N SI STO R Description planar type PNP silicon transistor . (IC/IB = -500mA / -50 mA) Features Low VCE(sat). VCE(sat) = -0.2V(Typ.) Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 1.50 1.30 2.40 0.89 4.25 1.70 1.50 2.60 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 1.40 0.35 5 0.52 1.60 0.41 TYP. 0.70 REF. Unit Absolute Maximum Ratings (Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(PULSE) Collector Power Dissipation (note1) ,unless otherwise specified) Ratings +150 -55 ~ +150 -40 -32 -5 -1 -2 0.
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