DESCRIPTION
Package Dimensions PNP EPITAXIAL T RANSISTOR REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. ABSOLUTE MAXIMUM RATINGS
at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -30 -30 -6 -1 225 Unit V V V A mW ELECTRICAL CHARACTERISTICS
(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) *hFE *fT Cob Min. -30 -30 -6 120 Typ. 320 7 , unless otherwise noted) Max. Unit -100 -100 -380 500 MHz pF V V V nA nA mV IC=-10uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VEB=-6V, IC=0 Test Conditions IC=-500mA, IB=-25mA VCE=-2V, IC=-100mA VCE=-2V, IE=100mA, f=100MHz VCB=-10V, f=1MHz *Pulsed Test Classification Of hFE Rank Range ESC 100 ~ 200 ESD 160 ~ 300 ESE 250 ~ 500 GSB1694 Page: 1/2 ISSUED DATE :2006/01/18 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved.
GTM
