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ISSUED DATE :2006/01/18 REVISED DATE :
GSB1694
Description Package Dimensions
PNP EPITAXIAL T RANSISTOR
The GSB1694 is designed for general purpose amplifier applications.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -30 -30 -6 -1 225 Unit
V V V A mW
Electrical Characteristics (Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) *hFE *fT Cob Min.