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GSD965 - NPN EPITAXIAL PLANAR TRANSISTOR

Datasheet Summary

Description

REF.

Millimeter Min.

4.45 1.02 0.36 0.36 0.36 Max.

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Datasheet Details

Part number GSD965
Manufacturer GTM
File Size 169.53 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet GSD965 Datasheet
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www.DataSheet4U.com CORPORATION GSD965 Description NPN EPITAXIAL PLANAR T RANSISTOR ISSUED DATE :2004/04/05 REVISED DATE :2004/11/29B The GSD965 is designed for use as AF output amplifier and flash unit Package Dimensions D E S1 TO-92 A b1 SE A TING P LA NE L REF. A S1 b e1 e b C Millimeter Min. 4.45 1.02 0.36 0.36 0.36 Max. 4.7 0.51 0.76 0.51 REF. D E L e1 e Millimeter Min. 4.44 3.30 12.70 1.150 2.42 Max. 4.7 3.81 1.390 2.66 b1 C Absolute Maximum Ratings at Ta = 25 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10mS) Junction Temperature Storage Temperature Total Power Dissipation at Ta = 25 BVCBO BVCEO BVEBO IC IC Tj Tstg PD 40 20 7.0 5 8 +150 -55 ~ +150 0.
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