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CORPORATION
GSD965AA
Description Package Dimensions
D E S1
ISSUED DATE :2005/02/17 REVISED DATE :
NPN EPITAXIAL PLANAR TRANSISTOR
The GSD965AA is designed for use as AF output amplifier and flash unit.
TO-92
A
b1 S E A T IN G PLANE
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings at Ta = 25
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10mS) Junction Temperature Storage Temperature Total Power Dissipation at Ta = 25 BVCBO BVCEO BVEBO IC IC Tj Tstg PD 60 30 7.0 5 8 +150 -55 ~ +150 0.