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GSS9510 - POWER MOSFET

Description

N-CH BVDSS 30V N-CH RDS(ON) 28m N-CH ID 6.9A P-CH BVDSS -30V N-CH RDS(ON) 55m N-CH ID -5.3A

Features

  • Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings N-channel P-channel Unit V V A A A W W/ 30 ±20 6.9 5.5 30 2.0 0.0.

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Datasheet Details

Part number GSS9510
Manufacturer GTM
File Size 434.09 KB
Description POWER MOSFET
Datasheet download datasheet GSS9510 Datasheet
Additional preview pages of the GSS9510 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/18 REVISED DATE : GSS9510 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET The GSS9510 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Low On-resistance *Fast Switching Performance Description N-CH BVDSS 30V N-CH RDS(ON) 28m N-CH ID 6.9A P-CH BVDSS -30V N-CH RDS(ON) 55m N-CH ID -5.3A Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.
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