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GSS9975 - POWER MOSFET

Features

  • High Breakdown Voltage.
  • Low On-resistance.
  • RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD.

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Datasheet preview – GSS9975

Datasheet Details

Part number GSS9975
Manufacturer GTM
File Size 317.13 KB
Description POWER MOSFET
Datasheet download datasheet GSS9975 Datasheet
Additional preview pages of the GSS9975 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/16 REVISED DATE : GSS9975 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 21m 7.6A The GSS9975 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Description Features *High Breakdown Voltage *Low On-resistance *RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
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