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GSS9980 - POWER MOSFET

Features

  • High Breakdown Voltage.
  • Low Gate Change.
  • Single Drive Requirement Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70.

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Datasheet preview – GSS9980

Datasheet Details

Part number GSS9980
Manufacturer GTM
File Size 317.12 KB
Description POWER MOSFET
Datasheet download datasheet GSS9980 Datasheet
Additional preview pages of the GSS9980 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/16 REVISED DATE : GSS9980 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 80V 52m 4.6A The GSS9980 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Description Features *High Breakdown Voltage *Low Gate Change *Single Drive Requirement Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
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