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GTT6301K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Datasheet Details

Part number GTT6301K
Manufacturer GTM
File Size 307.59 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GTT6301K Datasheet

Overview

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/09 REVISED DATE : GTT6301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 1 640mA The GTT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The GTT6301K is universally used for all commercial-industrial applications.

Key Features

  • Simple Drive Requirement.
  • Small Package Outline.
  • RoHS Compliant Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Total Power Dissipat.

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