• Part: GTT8205S
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Manufacturer: GTM
  • Size: 340.88 KB
Download GTT8205S Datasheet PDF
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Datasheet Summary

.. Pb Free Plating Product ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 6A The GTT8205S provide the designer with best bination of fast switching, low on-resistance and cost-effectiveness. The TSSOP-6 package is universally used for all mercial-industrial surface mount applications. - Low on-resistance - Capable of 2.5V gate drive - Low drive current Description Features Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95...