Datasheet Summary
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Pb Free Plating Product
ISSUED DATE :2006/08/08 REVISED DATE :
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 21m 7A
The GTT8209E used advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The GTT8209E is universally used for all mercial-industrial applications.
Description
- Lower Gate Charge
- Small Package Outline
- RoHS pliant
Features
Package Dimensions
REF. A A1 A2 c D E E1
Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
Absolute...