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GWS2111
Dual 12V N-Channel Power MOSFET
GWS2111
V(BR)DSS rDS(on)
Product Summary
ID=250uA VGS=4.5V
12.0 V 34 mΩ
Min Typ
Features
• Low RDS (on) in a small footprint
• Ultra low gate charge and figure of merit
• Chip-scale 0.77 mm x 0.77 mm LGA package
• Low Thermal Resistance
Equivalent Circuit
FET1
FET2
Gate1
Gate2
. .. .. .. .
Applications
• Li ion Battery Protection
• Portable Devices, Cell Phones, PDA
• Rated for short circuit and over current protection
• Integrated gate diodes provide ESD protection of 2500V HBM.
Source1
Source2
Description
The GWSXXXX is a Dual 12V, 34 mΩ, N-Channel Power Mosfet used
for Li ion battery protection. It is offered in a chip-scale 0.77 mm X 0.77
mm LGA with a very low thickness profile of 0.20 mm.