GS-065-030-2-L Datasheet 650V E-mode GaN transistor

Manufacturer: GaN Systems

GS-065-030-2-L 650v e-mode gan transistor by GaN Systems - Datasheet Preview

Datasheet Details

Part number	GS-065-030-2-L
Manufacturer	GaN Systems
File Size	0.97 MB
Description	650V E-mode GaN transistor
Datasheet	GS-065-030-2-L Datasheet

General Description

The GS-065-030-2-L is an enhancement mode GaNon-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.

Overview

GS-065-030-2-L 650 V E-mode GaN transistor Datasheet.

Key Features

650 V enhancement mode power transistor.
850 V transient drain-to-source voltage.
Bottom-cooled, 8x8 mm PDFN package.
RDS(on) = 50 mΩ.
IDS,max = 30 A / IDSmax,Pulse = 60 A.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
High switching frequency (> 1 MHz).
Fast and controllable fall and rise times.
Reverse conduction capability.
Zero reverse recovery los.

More Datasheets from GaN Systems

Part Number	Description
GS-065-030-6-LL	700V E-mode GaN transistor
GS-065-030-6-LR	700V E-mode GaN transistor
GS-065-004-1-L	650V E-mode GaN transistor
GS-065-004-6-L	700V E-mode GaN transistor
GS-065-008-1-L	650V E-mode GaN transistor
GS-065-008-6-L	700V E-mode GaN transistor
GS-065-011-1-L	650V E-mode GaN transistor
GS-065-011-2-L	650V E-mode GaN transistor
GS-065-011-6-L	700V E-mode GaN transistor
GS-065-011-6-LR	700V E-mode GaN transistor