GS-065-030-2-L Datasheet | GaN Systems

Features - 650 V enhancement mode power transistor - 850 V transient drain-to-source voltage - Bottom-cooled, 8x8 mm PDFN package - RDS(on) = 50 mΩ - IDS,max = 30 A / IDSmax,Pulse = 60 A - Simple gate drive requirements (0 V to 6 V) - Transient tolerant gate drive (-20 V / +10 V) - High switching frequency (> 1 MHz) - Fast and controllable fall and rise times - Reverse conduction capability - Zero reverse recovery loss - Source Sense (SS) pin for optimized gate drive - Ro HS 3 (6+4) pliant Top View Bottom View Applications - Bridgeless Totem Pole PFC - Consumer, Industrial and Datacenter High Density Power Supply - High Power Adapters - LED Lighting Drivers - Appliance and Industrial Motor Drives - Solar Inverter - Uninterruptable Power Supplies - Laser Drivers - Wireless Power Transfer Description The GS-065-030-2-L is an enhancement mode Ga Non-Silicon power transistor. The properties of Ga N allow for high current, high voltage breakdown and high switching frequency. Ga N Systems...