GS-065-030-6-LL Overview
The GS-065-030-6-LL is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.
GS-065-030-6-LL Key Features
- 700 V enhancement mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled, TOLL package
- RDS(on) = 40 mΩ
- IDS,max = 40 A / IDSmax,Pulse = 67 A
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability