GS-065-030-6-LR Datasheet (700V E-mode GaN transistor)

Part: GS-065-030-6-LR
Manufacturer: GaN Systems
Size: 888.67 KB

GS-065-030-6-LR Key Features

700 V enhancement mode power transistor
850 V transient drain-to-source voltage
Bottom-cooled, 8x8 mm PDFN package
RDS(on) = 37 mΩ
IDS,max = 40 A / IDSmax,Pulse = 67 A
Simple gate drive requirements (0 V to 6 V)
Transient tolerant gate drive (-20 V / +10 V)
High switching frequency (> 1 MHz)
Fast and controllable fall and rise times
Reverse conduction capability

Related GaN Systems Datasheets

Part Number	Description
GS-065-030-6-LL	700V E-mode GaN transistor
GS-065-030-2-L	650V E-mode GaN transistor
GS-065-004-1-L	650V E-mode GaN transistor
GS-065-004-6-L	700V E-mode GaN transistor
GS-065-008-1-L	650V E-mode GaN transistor

GS-065-030-6-LR Description

The GS-065-030-6-LR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.