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GS-065-030-6-LR - 700V E-mode GaN transistor

Description

The GS-065-030-6-LR is an enhancement mode GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Features

  • 700 V enhancement mode power transistor.
  • 850 V transient drain-to-source voltage.
  • Bottom-cooled, 8x8 mm PDFN package.
  • RDS(on) = 37 mΩ.
  • IDS,max = 40 A / IDSmax,Pulse = 67 A.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • High switching frequency (> 1 MHz).
  • Fast and controllable fall and rise times.
  • Reverse conduction capability.
  • Zero reverse recovery los.

📥 Download Datasheet

Datasheet preview – GS-065-030-6-LR

Datasheet Details

Part number GS-065-030-6-LR
Manufacturer GaN Systems
File Size 888.67 KB
Description 700V E-mode GaN transistor
Datasheet download datasheet GS-065-030-6-LR Datasheet
Additional preview pages of the GS-065-030-6-LR datasheet.

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Full PDF Text Transcription

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Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High switching frequency (> 1 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Source Sense (SS) pin for optimized gate drive • RoHS 3 (6+4) compliant GS-065-030-6-LR 700 V E-mode GaN transistor Datasheet Top View Bottom View Applications • Bridgeless Totem Pole PFC • Consumer, Industrial and Datacenter High Density Power Supply • High Power Adapters • LED Lighting Drivers • Appliance and Industrial Motor Drives • Solar Inverter • Uninterruptable P
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