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GS-065-030-6-LR Datasheet 700V E-mode GaN transistor

Manufacturer: GaN Systems

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Datasheet Details

Part number GS-065-030-6-LR
Manufacturer GaN Systems
File Size 888.67 KB
Description 700V E-mode GaN transistor
Datasheet download datasheet GS-065-030-6-LR Datasheet

General Description

The GS-065-030-6-LR is an enhancement mode GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.

Key Features

  • 700 V enhancement mode power transistor.
  • 850 V transient drain-to-source voltage.
  • Bottom-cooled, 8x8 mm PDFN package.
  • RDS(on) = 37 mΩ.
  • IDS,max = 40 A / IDSmax,Pulse = 67 A.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • High switching frequency (> 1 MHz).
  • Fast and controllable fall and rise times.
  • Reverse conduction capability.
  • Zero reverse recovery los.

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