GS-065-030-6-LR
Features
- 700 V enhancement mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled, 8x8 mm PDFN package
- RDS(on) = 37 mΩ
- IDS,max = 40 A / IDSmax,Pulse = 67 A
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Source Sense (SS) pin for optimized gate drive
- Ro HS 3 (6+4) pliant
GS-065-030-6-LR 700 V E-mode Ga N transistor
Top View
Bottom View
Applications
- Bridgeless Totem Pole PFC
- Consumer, Industrial and Datacenter High
Density Power Supply
- High Power Adapters
- LED Lighting Drivers
- Appliance and Industrial Motor Drives
- Solar Inverter
- Uninterruptable Power Supplies
- Laser Drivers
- Wireless Power Transfer
Description
The GS-065-030-6-LR is an enhancement mode Ga N-on-Silicon power transistor. The properties of Ga N allow for high current, high...
