GS61004B Datasheet (100V enhancement mode GaN transistor)

Part: GS61004B
Manufacturer: GaN Systems
Size: 883.06 KB

GS61004B Key Features

100V enhancement mode power transistor
Bottom-side cooled configuration
RDS(on) = 16 mΩ
IDS(max) = 38 A
Ultra-low FOM Island Technology® die
Low inductance GaNPX® package
Simple gate drive requirements (0 V to 6 V)
Transient tolerant gate drive (-20 V / +10 V)
Very high switching frequency (> 10 MHz)
Fast and controllable fall and rise times

Related GaN Systems Datasheets

Part Number	Description
GS61008P	100V enhancement mode GaN transistor
GS61008T	Top-side cooled 100V E-mode GaN transistor
GS66502B	650V enhancement mode GaN transistor
GS66504B	650V enhancement mode GaN transistor
GS66506T	Top cooled 650V enhancement mode GaN transistor

GS61004B Description

The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.