GS61004B
Features
- 100V enhancement mode power transistor
- Bottom-side cooled configuration
- RDS(on) = 16 mΩ
- IDS(max) = 38 A
- Ultra-low FOM Island Technology® die
- Low inductance Ga NPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 4.6 x 4.4 mm2 PCB footprint
- Ro HS 3 (6+4) pliant
Package Outline Circuit Symbol
Applications
- Enterprise and networking power
- Uninterruptable power supplies
- Industrial motor drives
- Solar power
- Fast battery charging
- Class D audio amplifiers
- Smart home
- Wireless Power Transfer
Description
The GS61004B is an enhancement mode Ga N-on-Silicon power transistor. The properties of Ga N allow for high current, high voltage breakdown, high switching frequency. Ga N Systems innovates with industry leading advancements such as patented Island...
