GS61008T
Features
- 100 V enhancement mode power transistor
- Top-side cooled configuration
- RDS(on) = 7 mΩ
- IDS(max) = 90 A
- Ultra-low FOM die
- Low inductance Ga NPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 7.0 x 4.0 mm2 PCB footprint
- Dual gate pads for optimal board layout
- Ro HS 3 (6 + 4) pliant
Package Outline
Circuit Symbol
The top-side thermal pad is internally connected to Source (S pin 3) and substrate
Applications
- Energy Storage Systems
- AC-DC Converters (secondary side)
- Uninterruptable Power Supplies
- Industrial Motor Drives
- Fast Battery Charging
- Class D Audio amplifiers
- Traction Drive
- Robotics
- Wireless Power Transfer
Description
The GS61008T is an enhancement mode Ga N-onsilicon power transistor. The properties of Ga N allow for high current, high...
