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GS61008T Datasheet Top-side cooled 100V E-mode GaN transistor

Manufacturer: GaN Systems

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Datasheet Details

Part number GS61008T
Manufacturer GaN Systems
File Size 965.05 KB
Description Top-side cooled 100V E-mode GaN transistor
Datasheet download datasheet GS61008T Datasheet

General Description

The GS61008T is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Overview

GS61008T Top-side cooled 100 V E-mode GaN transistor Datasheet.

Key Features

  • 100 V enhancement mode power transistor.
  • Top-side cooled configuration.
  • RDS(on) = 7 mΩ.
  • IDS(max) = 90 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery loss.

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