Datasheet4U Logo Datasheet4U.com

GS61008T - Top-side cooled 100V E-mode GaN transistor

Description

The GS61008T is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Features

  • 100 V enhancement mode power transistor.
  • Top-side cooled configuration.
  • RDS(on) = 7 mΩ.
  • IDS(max) = 90 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery loss.

📥 Download Datasheet

Datasheet preview – GS61008T

Datasheet Details

Part number GS61008T
Manufacturer GaN Systems
File Size 965.05 KB
Description Top-side cooled 100V E-mode GaN transistor
Datasheet download datasheet GS61008T Datasheet
Additional preview pages of the GS61008T datasheet.

📁 Similar Datasheet

  • GS6100 - 1A power tube built-in LED constant current driver (GSM)
  • GS6150 - Multi-Rate 6G UHD-SDI Reclocker (Semtech)
  • GS6001 - 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
  • GS6002 - 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
  • GS6004 - 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
  • GS6042 - 6G UHD-SDI/3G/HD/SD Adaptive Cable Equalizer (Semtech)
  • GS62C101 - System / Data Controller (GS Technology)
  • GS62C102 - Memory / Address Controller (GS Technology)
Other Datasheets by GaN Systems
  • GS61008P - 100V enhancement mode GaN transistor
  • GS61004B - 100V enhancement mode GaN transistor
  • GS66502B - 650V enhancement mode GaN transistor
  • GS66504B - 650V enhancement mode GaN transistor
  • GS66506T - Top cooled 650V enhancement mode GaN transistor
  • GS66508B - Bottom-side cooled 650V E-mode GaN transistor
  • GS66508P - Bottom-side cooled 650V E-mode GaN transistor
  • GS66508T - Top cooled 650V enhancement mode GaN transistor

Full PDF Text Transcription

Click to expand full text
GS61008T Top-side cooled 100 V E-mode GaN transistor Datasheet Features • 100 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 7.0 x 4.
Published: |