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GS61008P - 100V enhancement mode GaN transistor

Description

The GS61008P is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Features

  • 100 V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 7 mΩ.
  • IDS(max) = 90 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery loss.

📥 Download Datasheet

Datasheet Details

Part number GS61008P
Manufacturer GaN Systems
File Size 827.41 KB
Description 100V enhancement mode GaN transistor
Datasheet download datasheet GS61008P Datasheet

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Full PDF Text Transcription

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GS61008P Bottom-side cooled 100 V E-mode GaN transistor Datasheet Features • 100 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 7.6 x 4.
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