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GS61008P - 100V enhancement mode GaN transistor

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GaN Systems

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GS61008P 100V enhancement mode GaN transistor by GaN Systems - Datasheet Preview — Datasheet preview – GS61008P

Datasheet Details

Part number	GS61008P
Manufacturer	GaN Systems
File Size	827.41 KB
Description	100V enhancement mode GaN transistor
Datasheet	GS61008P Datasheet
Additional preview pages of the GS61008P datasheet.

Product details

Description

The GS61008P is an enhancement mode GaN-onsilicon power transistor.

Features

100 V enhancement mode power transistor.
Bottom-side cooled configuration.
RDS(on) = 7 mΩ.
IDS(max) = 90 A.
Ultra-low FOM die.
Low inductance GaNPX® package.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero reverse recovery loss.

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Published: Apr 14, 2017 |