GS61008P Key Features
- 100 V enhancement mode power transistor
- Bottom-side cooled configuration
- RDS(on) = 7 mΩ
- IDS(max) = 90 A
- Ultra-low FOM die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times