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GS61008P Datasheet 100V enhancement mode GaN transistor

Manufacturer: GaN Systems

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Datasheet Details

Part number GS61008P
Manufacturer GaN Systems
File Size 827.41 KB
Description 100V enhancement mode GaN transistor
Download Download datasheet GS61008P Download (PDF)

General Description

The GS61008P is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Overview

GS61008P Bottom-side cooled 100 V E-mode GaN transistor Datasheet.

Key Features

  • 100 V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 7 mΩ.
  • IDS(max) = 90 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery loss.

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