GS61008P
Features
- 100 V enhancement mode power transistor
- Bottom-side cooled configuration
- RDS(on) = 7 mΩ
- IDS(max) = 90 A
- Ultra-low FOM die
- Low inductance Ga NPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 7.6 x 4.6 mm2 PCB footprint
- Source Sense (SS) pin for optimized gate drive
- Ro HS 3 (6 + 4) pliant
Package Outline Circuit Symbol
The thermal pad (pad 5) must be connected to Source, S (pad
4)
Applications
- Energy Storage Systems
- AC-DC Converters (secondary side)
- Uninterruptable Power Supplies
- Industrial Motor Drives
- Fast Battery Charging
- Class D Audio amplifiers
- Traction Drive
- Robotics
- Wireless Power Transfer
Description
The GS61008P is an enhancement mode Ga N-onsilicon power transistor. The properties of Ga N allow for high current, high voltage...
