GaN Systems GS61008P
The GS61008P is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS61008P is a bottom-side cooled transistor that offers very low junction-tocase thermal resistance for demanding high power applications.| Part No. | GS61008P |
|---|---|
| Datasheet | GS61008P Download |
| Manufacturer |  GaN Systems |
| Description | 100V enhancement mode GaN transistor |
| Buy | Stock & Price |
FEATURES
● 100 V enhancement mode power transistor● Bottom-side cooled configuration
● RDS(on) = 7 mΩ
● IDS(max) = 90 A
● Ultra-low FOM die
● Low inductance GaNPX® package
● Simple gate drive requirements (0 V to 6 V)
● Transient tolerant gate drive (-20 V / +10 V)
● Very high switching frequency (> 10 MHz)
● Fast and controllable fall and rise times
● Reverse current capability
● Zero reverse recovery loss
● Small 7.6 x 4.6 mm2 PCB footprint
● Source Sense (SS) pin for optimized gate drive
● RoHS 3 (6 + 4) compliant Package Outline Circuit Symbol The thermal pad (pad 5) must be connected to Source, S (pad 4)
APPLICATIONS
● Energy Storage Systems● AC-DC Converters (secondary side)
● Uninterruptable Power Supplies
● Industrial Motor Drives
● Fast Battery Charging
● Class D Audio amplifiers
● Traction Drive
● Robotics
● Wireless Power Transfer
DESCRIPTION
GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes highcurrent die and high yield.
